Dielectric tunability of strontium substituted lead zirconium titanate thin films

Abstract

(PbxSr1-x)(Zr0.5Ti0.5)O3 films are prepared by solution-gelation method. It is done on substrate i.e.
Platinized silicon, beyond the compulsory need of SrTiO3 seed layer. Crystallinity at different annealing
temperature is studied with x-ray diffraction. Surface morphology, in terms of rms roughness of the films
is studied with atomic force microscopy. Dielectric properties (?r and tan?) of the films are studied as
functions of frequency and temperature with impedance analyzer. Dielectric tunability of the films are
studied with bias voltage variation at different frequencies and the quality factor is analyzed.