A 3-diode model for PbOx solar cells: integration of trap assisted charge transport mechanism

Abstract

In this paper, we have highlighted inferior performance of 2-diode model while fitting oxide based
solar cells consisting traps, intra-bands and/or defects. A conventional 2-diode model was prolonged
after including the 3rd diode corresponding to trap assisted charge transport phenomena. PbOx/Au:Pd
Schottky junction solar cells utilizing different Au:Pd thicknesses (1, 2 and 3 nm) were used to
compare the solar cell parameters obtained by using modified 3-diode model. Noticeable improvement
was observed in the acquired values of saturation current densities and ideality factors while using 3-
diode approach. Qualitative comparative analysis enables researchers to carefully include an extra
diode which would enhance the accuracy of parametric outcomes.