Threshold and Growth Rate of Plasmon-Acoustical Phonon Mode Induced Optical Modulation in Magnetized Diffusive III-V Semiconductors

  • Suraj Bhan
  • Harjit Pal Singh
  • Vaneet Kumar
  • Manjeet Singh

Abstract

In this paper, a theoretical formulation followed by numerical analysis is developed to study threshold and growth rate of plasmon-acoustical phonon mode induced optical modulation in transversely magnetized diffusive semiconductors. The origin of nonlinear interaction is assumed to lie in the induced nonlinear diffusion current density of the medium. By considering the modulation process as a four wave parametric interaction, an expression for effective third-order susceptibility (?D(3)) describing the phenomena has been obtained. The threshold pump electric field (E0th) for the onset of modulation process and growth rate (g) of modulated beam are obtained via ?D(3). Numerical estimations made for CO2- n-InSb system reveal that in the presence of enhanced diffusion due to excess charge carriers the growth rate of modulated wave can be effectively enhanced by properly selecting the material parameters and externally applied magnetostatic field in dispersion-less acoustic wave regime. The results suggest that a cheaper efficient optical modulator can be fabricated using n-InSb-CO2 system as the outcome of this research work.

Published
2019-10-05
Section
Articles